Recent papers on semiconductor nitrides:

  1. J. A. Chan, J. Z. Liu, H. Raebiger, S. Lany, and A. Zunger Relative Stability, Electronic Structure and Magnetism of MnN and (Ga,Mn)N Alloys Phys. Rev. B 78, 184109 (2008) (pdf).

  2. S.V. Dudiy, A. Zunger, M. Felici, A. Polimeni, M. Capizzi, H.P. Xin, and C.W. Tu Nitrogen-induced perturbation of the valence band states in GaPN alloys, Phys. Rev. B 74, 155303 (2006). (pdf).

  3. S.V. Dudiy and Alex Zunger, Searching for Alloy Configurations with Target Physical Properties: Impurity Design via a Genetic Algorithm Inverse Band Structure Approach, Phys. Rev. Lett. 97, 046401 (2006). (pdf).

  4. S.V. Dudiy, P. R. C. Kent, and Alex Zunger, Penetration of electronic perturbations of dilute nitrogen impurities deep into the conduction band of GaPN, Phys. Rev. B 70, 161304(R) (2004). (pdf).

  5. S.V. Dudiy and Alex Zunger, Type I to type II transition at the interface between random and ordered domains of AlxGa1-xN alloys, Appl. Phys. Lett. 84, 1874 (2004) (pdf).

  6. C. Persson and Alex Zunger, s-d Coupling in Zincblende Semiconductors Phys. Rev. B 68, 073205 (2003). (pdf).

  7. C. Persson and Alex Zunger, Deep nitrogen-induced valence- and conduction-band states in GaAs1-xNx, Phys. Rev. B 68, 035212 (2003) (pdf).

  8. S.V. Dudiy and Alex Zunger, Optical consequences of long-range order in wurtzite AlxGa1-xN alloys, Phys. Rev. B 68, 041302 (2003) (pdf).

  9. P.R.C. Kent and Alex Zunger, Failure of nitrogen cluster states to emerge into the bandgap of GaAsN with application of pressure, Appl. Phys. Lett. 82, 559 (2003) (pdf).

  10. P.R.C. Kent, G.L.W. Hart, and Alex Zunger, Biaxial strain-modified valence and conduction band offsets of zinc-blende GaN, GaP, GaAs, InN, InP, and InAs, and optical bowing of strained epitaxial InGaN alloys, Appl. Phys. Lett. 81, 4377 (2002) (pdf).

  11. P.R.C. Kent, L. Bellaiche, and Alex Zunger, Pseudopotential theory of dilute III-V nitrides, Semicond. Sci. Tech. 17, 851 (2002) (pdf).